研究目的
To summarize graphene and doped graphene characterizations using SEM, TEM, STM, AFM, FTIR, XRD, XPS, and Raman techniques, and to discuss macroscopic and electrochemical properties such as CV and EIS methods for graphene-based materials.
研究成果
The chapter concludes by summarizing the importance of various characterization techniques for studying graphene and doped graphene, highlighting the unique insights each technique provides into the material's properties and applications.
研究不足
The chapter does not explicitly mention limitations of the study or the techniques discussed.
The chapter summarizes various characterization techniques for graphene and doped graphene, including SEM, TEM, STM, AFM, FTIR, XRD, XPS, and Raman spectroscopy. It discusses the application of these techniques to study the morphology, topography, composition, and crystallographic information of graphene-based materials. The chapter also covers macroscopic characteristics and electrochemical properties of graphene, such as CV and EIS methods, to investigate the surface area and charge transfer of synthesized graphene.
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SEM
Studying the morphology, topography, composition, and crystallographic information of materials.
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TEM
Studying carbon allotrope materials, particularly when the electron-beam energy is reduced to minimize radiation damage.
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STM
Investigating the electronic properties of single atomic defects on the atomic lattice of graphene.
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AFM
Estimating single-layer graphene and studying the shape, size, structure, absorption/dispersion, and aggregation of nanomaterials.
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FTIR
Analyzing graphene derivatives and revealing specific functional groups.
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XRD
Studying the crystalline nature and phase purity of synthesized materials.
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XPS
Identifying the state of elements in bulk materials and studying the heteroatoms doping or decorating a graphene surface.
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Raman spectroscopy
Characterizing graphene-based materials in terms of number of layers, stacking order, degree of disorder, and strain.
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