研究目的
Investigating the impacts of oxygen vacancy concentration on the magnetic and optical properties of SnO2-x thin films prepared by Atomic Layer Deposition.
研究成果
The concentration of oxygen vacancies in SnO2-x thin films can be controlled by adjusting the oxidant pulse time during ALD, significantly affecting the films' magnetic and optical properties. Higher oxygen vacancy concentrations lead to reduced crystalline size and larger direct optical band gaps, offering potential new applications in the electronics industry.
研究不足
The study focuses on the impact of oxygen vacancies on magnetic and optical properties but does not explore the potential for optimizing these properties for specific applications. The ALD process parameters are limited to oxidant pulse time for controlling oxygen vacancy concentration.
1：Experimental Design and Method Selection:
SnO2-x thin films were deposited on a Si substrate through ALD, with the oxygen vacancy concentration controlled by changing the oxidant pulse time.
2：Sample Selection and Data Sources:
Thin films were synthesized with varying oxidant pulse times, resulting in samples with different oxygen vacancy concentrations.
3：List of Experimental Equipment and Materials:
ALD system (Samco AL-1), TEM (Hitachi, H-9500), XRD (Bruker D8), XPS (Thermo Scientific, K-Alpha), Raman spectroscopy (Kaiser Optical Systems, K8), PPMS (Quantum Design, Versalab), UV-Vis spectrum (Shimadzu, Model: UV160A).
4：Experimental Procedures and Operational Workflow:
Thin films were characterized for morphology, crystallization, surface chemical states, magnetic properties, and optical properties.
5：Data Analysis Methods:
XRD patterns were analyzed for crystal structure, EPR for oxygen vacancy concentration, XPS for surface chemical states, Raman spectroscopy for crystal defects, and UV-Vis for optical properties.
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