研究目的
Investigating the rotation of ferroelectric polarization direction in order-disorder-type LiNbO3 thin films by controlling Li vacancy concentration.
研究成果
The study demonstrates the feasibility of rotating the direction of spontaneous polarization in order-disorder-type ferroelectric LiNbO3 thin films by varying the elemental stoichiometry and resultant local lattice structure. The inclusion of monoclinic LiNb3O8-like phase due to Li vacancies facilitates the rotation of polarization from out-of-plane to in-plane direction, as supported by SHG and PFM data.
研究不足
The study is limited to the observation of polarization rotation in LiNbO3 thin films under specific conditions of oxygen partial pressure and temperature. The exact mechanisms of polarization rotation and its implications for other materials or conditions are not fully explored.
1：Experimental Design and Method Selection:
Pulsed laser deposition (PLD) under various oxygen partial pressures (P(O2)) of 5–50 mTorr at 600oC was used to fabricate LNO (001) thin films.
2：Sample Selection and Data Sources:
Thin films were deposited on Ti-terminated atomically flat SrTiO3 (STO) (111), and Nb (
3：5wt%)-doped STO (Nb:
STO) (111) substrates.
4：List of Experimental Equipment and Materials:
High resolution x-ray diffractometer (Rigaku SmartLab and PANalytical X’Pert), scanning transmission electron microscope (STEM, JEOL ARM200CF), x-ray photoelectron spectroscopy (XPS, Thermo Scientific), x-ray absorption spectroscopy (XAS), second harmonic generation (SHG) experiment, piezoresponse force microscopy (PFM).
5：Experimental Procedures and Operational Workflow:
XRD θ-2θ and pole figure measurements, STEM imaging, XPS and XAS measurements, SHG experiment, PFM measurements.
6：Data Analysis Methods:
Analysis of XRD, STEM, XPS, XAS, SHG, and PFM data to understand the rotation of ferroelectric polarization direction.
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