1：Experimental Design and Method Selection:

The study employed a sol-gel method for fabricating ZTO thin films, focusing on the influence of annealing temperature on their structure and electrical properties.

2：Sample Selection and Data Sources:

ZTO precursor solutions were prepared using SnCl2 and ZnCl2 as tin and zinc precursors, respectively, with ethanol as the solvent.

3：List of Experimental Equipment and Materials:

Equipment included a thermogravimetric analyzer (TG, Q600 analyzer), X-Ray Diffraction (XRD) with Rigaku D/MAX-2500, UV-vis spectrophotometer (UV-2550, SHIMADZU), HITACHI S4800 Scanning Electron Microscopy (SEM), VEECO Dimension 3100 Atomic Force Microscope (AFM) system, and X-ray photoelectron spectroscope (XPS) with an Al Ka X-ray source and a K-Alpha spectrometer.

4：Experimental Procedures and Operational Workflow:

ZTO precursor solutions were spin-coated on Si/SiO2 substrates, preheated, and annealed at temperatures ranging from 300 (cid:1) to 600 (cid:1). Al source and drain electrodes were then deposited by thermal evaporator.

5：1). Al source and drain electrodes were then deposited by thermal evaporator. Data Analysis Methods:

5. Data Analysis Methods: Electrical characteristics of TFTs were measured at room temperature with two Keithley 2400 analyzers.