研究目的
Investigating the effects of sulfur incorporation on the bandgap reduction and charge carrier transport properties of BiVO4 photoanodes for improved photoelectrochemical water splitting performance.
研究成果
Sulfur incorporation in BiVO4 thin films effectively reduces the bandgap by ~0.3 eV and improves charge carrier mobility by a factor of ~3, leading to a ~70% increase in carrier diffusion length. This enhances the photoelectrochemical performance, demonstrating sulfur doping as a viable strategy for improving metal oxide photoelectrodes.
研究不足
Phase segregation into Bi2S3 occurs at higher sulfur partial pressures, limiting the maximum achievable sulfur incorporation without compromising material integrity. Additionally, sulfur-incorporated films show stability issues under photoelectrochemical conditions due to re-oxidation.
1：Experimental Design and Method Selection:
Spray pyrolysis was used to prepare BiVO4 films, followed by post-annealing in a sulfur-rich atmosphere to incorporate sulfur.
2：Sample Selection and Data Sources:
BiVO4 films were annealed at different sulfur partial pressures to control sulfur concentration.
3：List of Experimental Equipment and Materials:
A two-chamber oven for sulfur incorporation, UV-Vis spectrometer, X-ray photoelectron spectroscopy (XPS), X-ray fluorescence (XRF), Raman spectroscopy, scanning electron microscope (SEM), time-resolved microwave conductivity (TRMC) setup, and photoelectrochemical (PEC) measurement setup.
4：Experimental Procedures and Operational Workflow:
Films were characterized for optical, structural, and electronic properties before and after sulfur incorporation. TRMC and PEC measurements were conducted to assess charge carrier mobility and photoelectrochemical performance.
5：Data Analysis Methods:
Bandgap was determined using Tauc analysis, sulfur concentration was quantified via XRF and XPS, and DFT calculations were performed to understand sulfur incorporation effects.
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Bruker D8 diffractometer
D8
Bruker
X-ray diffraction for structural characterization
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Lambda 950 spectrometer
950
Perkin Elmer
UV-Vis spectroscopy for optical absorption measurements
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Rigaku WD-XRF ZSX Primus II
ZSX Primus II
Rigaku
X-ray fluorescence for bulk elemental analysis
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SPECS PHOIBOS 100 analyzer
PHOIBOS 100
SPECS
X-ray photoelectron spectroscopy for surface analysis
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Horiba HR800 spectrometer
HR800
Horiba
Raman spectroscopy for vibrational mode analysis
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LEO GEMINI 1530
1530
LEO
Scanning electron microscopy for morphological characterization
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