研究目的
To explore the onset and further evolution of the stress during Ge crystallization in the form of quantum dots (QDs) embedded in a SiO2 matrix after the deposition of SiO2/(SiO2 + Ge) multilayers and subsequent annealing in a broader temperature range.
研究成果
The study demonstrates the structural and optical changes in Ge nanoparticles embedded in a SiO2 matrix upon annealing. It shows that stress evolution during Ge nanoparticle growth and dissolution can be studied using complementary techniques. The visible photoluminescence is attributed to defects at the nanoparticle/matrix interface, persisting even after Ge dissolution.
研究不足
The study is limited to the temperature range of 500?750 °C for annealing and focuses on the structural and optical properties of Ge nanoparticles in a SiO2 matrix. The optical properties are attributed to defects in the interface layers, but the exact nature of these defects is not fully characterized.
1：Experimental Design and Method Selection:
Multilayer magnetron deposition at room temperature of alternating SiO2 and SiO2 + Ge layers, each 4 nm thick, followed by annealing at different temperatures in the range 500?750 °C in flowing dry N2. Structural and optical properties were studied by GISAXS, GIWAXS, TEM, and PL.
2：Structural and optical properties were studied by GISAXS, GIWAXS, TEM, and PL.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Samples were prepared on cleaned and freshly etched p-type (100)-oriented Si monocrystals. Data were collected at the synchrotron radiation facility at Elettra Sincrotrone Trieste.
3：List of Experimental Equipment and Materials:
Magnetron sputtering deposition system, synchrotron radiation facility, TEM (JEM-2200FS, Jeol), PL measurement setup using a continuous-wave laser diode at 405 nm, and TRPL spectrometer (FluoTime 100).
4：0).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Deposition of multilayers, annealing, and characterization using GISAXS, GIWAXS, TEM, and PL techniques.
5：Data Analysis Methods:
GISAXS and GIWAXS data were analyzed using the Guinier approximation and Rietveld analysis. TEM images were analyzed for structural changes, and PL data were fitted to stretched exponential functions.
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