研究目的
Investigating the electronic structures and optical gain of dilute nitride GaAs nanowires to assess their suitability for use as linearly polarized lasers in the near-infrared range.
研究成果
GaAs1%xNx nanowires show potential for use as TM linearly polarized lasers in the near-infrared range when the radius is 3 nm, due to the significantly larger TM gain compared to TE gain. However, this suitability diminishes as the radius increases to 6 nm, where the TM gain approaches the TE gain.
研究不足
The study is theoretical and does not include experimental validation. The applicability of the findings is limited to GaAs1%xNx nanowires with nitrogen content x ≤ 0.05 and specific radii (3 nm and 6 nm).
1：Experimental Design and Method Selection:
The study employs the band anticrossing model combined with the eight-band k & p theory to calculate the electronic structures and optical gain spectra of GaAs1%xNx nanowires.
2：Sample Selection and Data Sources:
Theoretical calculation based on GaAs1%xNx nanowires with varying nitrogen content and radii.
3：List of Experimental Equipment and Materials:
Not applicable as the study is theoretical.
4：Experimental Procedures and Operational Workflow:
Calculation of electronic structures and optical gain spectra using the 10-band k · p theory, considering transitions between all conduction subbands and valence subbands.
5：Data Analysis Methods:
Analysis of optical gain spectra to determine the effect of nitrogen content and nanowire radius on the gain and polarization properties.
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