研究目的
Addressing the lack of transparent and industrially scalable rectifying p–n junctions that can open multiple application paths in transparent electronics.
研究成果
A transparent p–n junction with a rectifying behaviour and an optical transmittance of 50% was developed using a simple and scalable process. The electrical behaviour of the junction depends on the post-annealing temperature due to the tuning of the Fermi level and carrier concentrations. The process is of interest for electronic applications based on the principle of transparent diodes.
研究不足
The ideality factor achieved was η ~ 6, which needs improvement compared to the best values reported in literature. The series resistance is quite large (Rs = 2 M?), and the interface defect density is high, suggesting a need for better interface engineering.
1：Experimental Design and Method Selection:
The fabrication of transparent diodes based on ZnO and Cu
2：66Cr33O2 involved a five-step process including metal organic chemical vapour deposition, atomic layer deposition, chemical wet etching, and optical lithography, followed by thermal annealing. Sample Selection and Data Sources:
Cu
3：66Cr33O2 films were deposited on a sapphire substrate using Direct Liquid Injection—Metal Organic Chemical Vapour Deposition system. ZnO was deposited on glass substrate for thin film study and on top of the delafossite film on sapphire to make a p–n junction. List of Experimental Equipment and Materials:
DLI-MOCVD system (MC200 from Annealsys), copper and chromium precursors (Cu(thd)2 and Cr(thd)3, Strem Chemicals), Rapid Thermal Annealing reactor (from Annealsys), Bruker Innova for KPFM measurements, Bruker D8 Discover for XRD.
4：Experimental Procedures and Operational Workflow:
Deposition of Cu
5：66Cr33O2 on sapphire at 450°C, ALD deposition of ZnO at 150°C, annealing at 650 and 700°C, patterning by lithography, electrical and optical characterization. Data Analysis Methods:
Electrical characterization of the junction with two points at different voltage, Hall-effect measurements for carrier concentration, KPFM for work function measurements, XRD for structure study, SEM for morphology and thickness inspection.
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