研究目的
To develop a large-format flexible UV image-sensing array based on lateral-bridged ZnO nanowires for focal-plane image sensor applications.
研究成果
The flexible 32 × 32 UV sensor array based on laterally bridged ZnO nanowires demonstrates high uniformity, excellent electrical performance, and mechanical flexibility, making it a promising candidate for flexible UV focal-plane image sensors. The fabrication method is reliable, cost-effective, and compatible with large-area processing.
研究不足
The study does not address the long-term stability of the sensor array under repeated bending or exposure to harsh environmental conditions. Additionally, the process scalability for larger arrays or different substrate materials is not explored.
1：Experimental Design and Method Selection:
The study involved the fabrication of a 32 × 32 UV sensor array on a polyimide substrate using a combination of on-chip manufacture and hydrothermal synthesis techniques.
2：Sample Selection and Data Sources:
A polyimide film was used as the substrate, and ZnO nanowires were grown laterally to bridge metal electrodes.
3：List of Experimental Equipment and Materials:
Equipment included a magnetron sputtering system for ZnO layer deposition, a photolithography setup for patterning, and a hydrothermal synthesis setup for ZnO NW growth. Materials included Zn(NO3)2·6H2O, hexamethylenetetramine (HMTA), and AgNO3 for surface modification.
4：Experimental Procedures and Operational Workflow:
The process involved cleaning the PI substrate, patterning by photolithography, depositing ZnO and Ti/Au layers, performing rapid thermal annealing, and growing ZnO NWs hydrothermally.
5：Data Analysis Methods:
Electrical characteristics were evaluated using a semiconductor parameter analyzer, with performance metrics including photocurrent, responsivity, and detectivity calculated from the data.
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