研究目的
Investigating the preparation and photoelectric characteristics of graphene/MoSe2 heterojunction for potential applications in optoelectronic devices.
研究成果
The graphene/MoSe2 heterojunction exhibits excellent optical and electrical properties, including good light absorption and significant photocurrent generation, making it a promising material for optoelectronic devices such as solar cells and photodetectors.
研究不足
The study does not discuss the scalability of the CVD method for large-scale production or the long-term stability of the heterojunction under operational conditions.
1：Experimental Design and Method Selection:
The study used chemical vapor deposition (CVD) to deposit MoSe2 films on Si substrates and then grew a graphene layer on the MoSe2 film to form a heterojunction.
2：Sample Selection and Data Sources:
MoSe2 powder and methane (CH4) were used as raw materials.
3：List of Experimental Equipment and Materials:
Atomic force microscopy (AFM), X-ray diffractometry (XRD), Raman spectroscopy, HMS-3000 Hall Effect Meter, I-V measurement, and UV-3600 spectrophotometer were used.
4：Experimental Procedures and Operational Workflow:
The process involved cleaning the silicon substrate, depositing MoSe2 films at 700°C for 30 mins, and then growing graphene at 850°C for 10 mins.
5：Data Analysis Methods:
The surface morphology, crystal structure, and photoelectric properties were analyzed using AFM, XRD, Raman spectroscopy, and I-V measurements.
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