研究目的
To develop an integrated, 1-transistor 1-RRAM cell based on amorphous InGaZnO flexible thin-film transistor technology on a flexible polyimide substrate.
研究成果
The work successfully integrated IGZO-based TFT and TaOx-based RRAM memory cells side-by-side on a flexible polyimide substrate. The memory cells demonstrated a memory window of 7.76 over 165 cycles, enabling direct read-out by TFT circuits.
研究不足
The fabrication process is constrained by the temperature budget imposed by the PI film, limiting deposition temperatures to ≤ 350 oC. Additionally, adhesion issues between the RRAM and AM layer on the via edge were observed.
1：Experimental Design and Method Selection:
The focus was on developing an integration route towards an InGaZnO (IGZO)-based TFT and a RRAM memory device. The gate metal was used as one of the RRAM contacts to simplify the process and exploit the flattest surface.
2：Sample Selection and Data Sources:
The full transistor-memory stack was developed on a 6-inch polyimide (PI) coated glass carrier wafer.
3：List of Experimental Equipment and Materials:
Equipment includes a Cascade Summit 12000 semi-automated wafer-probing system and an Agilent 4156c parameter analyzer. Materials include Si3N4, Al2O3, IGZO, SiO2, MoCr, TaOx, and Ti/Al/Ti.
4：Experimental Procedures and Operational Workflow:
The process involved deposition and patterning of various layers, including IGZO semiconductor, gate stack, intermetal dielectric, RRAM stack, and metal layers for contacts.
5：Data Analysis Methods:
Electrical characterization was performed to analyze TFT and RRAM performance, including transfer characteristics, forming, reset, and set phases.
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