研究目的
Design and implementation of a broadband solid state SC-band high power amplifier using GaN technology and power combining technique to achieve high output power and efficiency over a wide frequency range.
研究成果
The designed broadband GaN high power amplifier achieves up to 48 dBm output power and 15 % power added efficiency (average) from 2 to 6 GHz for 100 % bandwidth, demonstrating good performance for high power applications.
研究不足
The power efficiency of the power amplifier decreases over a broadband frequency range, and thermal management is a critical issue due to high power operation.
1：Experimental Design and Method Selection:
The design methodology involves combining several medium power GaN technology amplifiers to achieve high output power. The architecture includes four power-lines with a high power amplifier and a medium power amplifier as the input driver amplifier, using power combiners at the output.
2：Sample Selection and Data Sources:
The design is based on GaN power amplifiers from Wolfspeed (CREE) and uses synthetic substrates for fabrication.
3：List of Experimental Equipment and Materials:
GaN power amplifiers, synthetic substrates (Rogers RO4003C and RF35 TACONIC), Advanced Design System (ADS) software for simulation, ANSYS software for thermal simulation.
4：Experimental Procedures and Operational Workflow:
The design process includes power budgeting, simulation using ADS, thermal simulation using ANSYS, fabrication on synthetic substrates, and measurement under continuous wave operation.
5：Data Analysis Methods:
The output power and power added efficiency are measured and compared with simulation results to evaluate the performance of the designed power amplifier.
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