研究目的
Investigating the dielectric properties and conduction process for multicomponent Ge10-xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glass.
研究成果
The study concluded that dielectric constant and dielectric loss decrease with increasing frequency and increase with temperature. The a.c. conductivity follows the power law with s<1, and the value of s decreases with temperature. These findings are well interpreted using the CBH model. The incorporation of In increases the dielectric constant, dielectric loss, and a.c. conductivity due to increased cross-linking and adhesive energy in the glassy matrix.
研究不足
The study is limited to the frequency range of 100Hz to 1MHz and temperature range of 303 to 328K. The interpretation of results is based on the CBH model, which may not account for all conduction mechanisms in chalcogenide glasses.
1：Experimental Design and Method Selection:
The study involved the preparation of amorphous Ge10-xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses by melt quench technique. The dielectric properties and a.c. conductivity were examined in the frequency range 100Hz to 1MHz and temperature range 303 to 328K.
2：8K. Sample Selection and Data Sources:
2. Sample Selection and Data Sources: High purity (
3：999%) elements of Germanium(Ge), Selenium(Se), Tellurium(Te) and Indium(In) were used. List of Experimental Equipment and Materials:
SEM and EDS for surface morphology and chemical composition analysis, digital LCR meter for dielectric measurements, X-ray diffractometer for XRD patterns.
4：Experimental Procedures and Operational Workflow:
The bulk glassy alloys were developed by melt quench techniques, followed by characterization using SEM, EDS, and XRD. Dielectric measurements were conducted using a digital LCR meter.
5：Data Analysis Methods:
The variation of dielectric constant, dielectric loss, and a.c. conductivity with frequency and temperature was analyzed using the CBH model.
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