研究目的
Investigating the energy efficiency of the physical process in atomic layer deposited Si-metal oxide semiconductor capacitors (MOSCAPs) with ultra-thin TiN/HfSiO gate-dielectric stack on Si substrate.
研究成果
The combination of Q-DLTS and SE techniques provides valuable insights into the energy efficiency of TiN/HfSiO gate-dielectric stacks in MOSCAP devices. Key parameters such as trap concentration, activation energy, and capture cross-section were found to significantly influence the device's energy efficiency. The study confirms the importance of oxygen redistribution effects at high annealing temperatures and suggests that these techniques can be useful for optimizing manufacturing protocols for energy-efficient devices.
研究不足
The study is limited to the analysis of TiN/HfSiO gate-dielectric stacks on Si substrates and may not be directly applicable to other materials or configurations. The effects of oxygen redistribution at high annealing temperatures could introduce variability in the results.
