研究目的
To fabricate a plasmonic optoelectronic device with plasmon enhanced infrared sensitivity by integrating plasmonic gold nanoparticles with an organic semiconductor matrix.
研究成果
The study successfully demonstrates the fabrication of a plasmonic optoelectronic device with significant enhancement in infrared responsivity due to the integration of plasmonic gold nanoparticles with an organic semiconductor matrix. The device shows improved photovoltaic properties and efficient charge transfer, highlighting the potential of plasma based processes in developing advanced optoelectronic devices responsive to the infrared region.
研究不足
The study focuses on the fabrication and characterization of a plasmonic optoelectronic device with specific materials and conditions, which may limit its applicability to other materials or conditions. The device performance is evaluated under specific wavelengths and intensities, which may not cover all possible operational scenarios.
1：Experimental Design and Method Selection:
The experiment involves the fabrication of an optoelectronic device using plasma based processes to integrate plasmonic gold nanoparticles (Au NPs) with an organic semiconductor matrix (PPA-Rubrene).
2：Sample Selection and Data Sources:
Materials used include gold (Au) target, Rubrene, Aniline monomer, Argon gas, Aluminium (Al) wires, Quartz, glass and silicon substrates.
3：List of Experimental Equipment and Materials:
Stainless steel cylindrical plasma reactor, magnetron sputtering setup, RF generator, mass flow controller, Teflon pipe, thermal evaporation unit.
4：Experimental Procedures and Operational Workflow:
The synthesis involves deposition of PPA-Rubrene layer by plasma deposition followed by deposition of Au NPs over the PPA-Rubrene thin film by magnetron sputtering. The device fabrication includes deposition of PPA-Rubrene on ITO coated glass substrates, deposition of Au NPs, and finally deposition of Aluminium (Al) counter electrode.
5：Data Analysis Methods:
Structural details studied by FTIR spectrometry, UV–visible spectrophotometric study, morphological features examined using FESEM and TEM, current–voltage (I-V) characteristics under dark/white light and spectral response measured using a Keithley electrometer.
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Rubrene
C42H48, GC > 99%
Sigma, Aldrich
Acts as an organic semiconductor in the device.
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Aniline monomer
C6H5NH2
Sigma, Aldrich
Precursor for the synthesis of plasma polymerized aniline (PPA).
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UV–visible spectrophotometer
UV-2600
Shimadzu
Used to examine the absorbance of the samples.
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Field Emission Scanning Electron Microscopy (FESEM)
ΣIGMA VP
Carl Zeiss
Used to examine the morphological features of the samples.
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Gold target
99.99% purity, dia. 2.54 cm
Used for magnetron sputtering to create plasmonic gold nanoparticles.
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Argon gas
99.999% pure
Used as a carrier gas for sputtering.
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Aluminium wires
99.99% purity
Alfa Aesar
Used for electrode deposition.
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Quartz, glass and silicon substrates
Used for the convenience of different characterizations.
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Propanol
Merck
Used for cleaning purposes.
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Acetone
Merck
Used for cleaning purposes.
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Deionized water
MilliQ
Used for cleaning purposes.
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Stainless steel cylindrical plasma reactor
40 cm length and 30 cm diameter
Used for the plasma based fabrication of the optoelectronic device.
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RF generator
RF VII, USA, operating at 13.56 MHz
Used to facilitate plasma polymerization.
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Pulse DC power supply
Pinnacle Plus, Advanced Energy, USA
Used for magnetron sputtering of Au NPs.
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Thermal evaporation unit
Used for the deposition of Aluminium (Al) counter electrode.
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Fourier Transform Infrared (FTIR) spectrometer
Nicolet 5700 FT-IR
Used to study the structural details of the prepared samples.
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Transmission Electron Microscopy (TEM)
JEM 2100F
Used to examine the morphological features of the samples.
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Keithley electrometer
Keithley 6517B
Used to measure the current–voltage (I-V) characteristics under dark/white light and spectral response of the photodetectors.
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Optical power meter
1830-R
Newport
Used to record and calibrate the intensity of the light sources.
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