研究目的
To examine how the main technological parameters of the process affect the etching rate of single-crystal quartz and develop on this basis a process for its deep plasma-chemical etching (PCE).
研究成果
The study successfully developed and optimized the process of deep through plasma-chemical etching of quartz with high selectivity with respect to the mask material. The most important parameter affecting the etching rate was found to be the bias voltage applied to the table with the substrate holder.
研究不足
The study focused on the etching of single-crystal quartz to a depth of several hundred micrometers, which remains apparently insuf? ciently studied. The experiments were limited to the use of a specific gas mixture (SF6/O2) and a set range of technological parameters.
1：Experimental Design and Method Selection:
The study used the Taguchi matrix technique to rank basic technological parameters influencing the etching rate.
2：Sample Selection and Data Sources:
Plates of single-crystal quartz (z-cut) with thickness of 369 μm and a metallic 7-μm-thick Cr–Ni mask were used.
3：List of Experimental Equipment and Materials:
The experiments were performed in a specially designed installation for plasma-chemical etching with inductively coupled plasma.
4：Experimental Procedures and Operational Workflow:
The etching was performed in a mixture of gases SF6/O
5：The working gases were delivered to the discharge chamber with RRG-10 gas ? ow regulators. Data Analysis Methods:
The results of these experiments were used to perform ranking of these parameters as regards the strongest in? uence exerted on the etching rate of single-crystal quartz with the use of Minitab 17 software.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
