研究目的
Investigating the optical properties and determining the binding energy of the Sb-related donor bound exciton in ZnO using photoluminescence excitation spectroscopy.
研究成果
The binding energy of the Sb-related shallow donor in Sb-doped ZnO was directly measured as 42:2 + 0:5 meV, the shallowest ZnO donor yet reported. The Sb-related donor has a significant negative central cell shift compared with positive values observed for group III donors but still obeys Hayne’s rule.
研究不足
The broadening of the TES transition is due to inhomogeneous broadening caused by inter-impurity wave function overlap. Further measurements with higher purity samples will be required to refine the accuracy of the Sb donor binding energy.
1：Experimental Design and Method Selection:
Photoluminescence excitation (PLE) spectroscopy was employed to investigate the optical properties of Sb-doped ZnO. A tunable UV source was used for resonant excitation.
2：Sample Selection and Data Sources:
ZnO nanowires were grown on sapphire c-axis substrates using dimethylzinc (DMZn) and nitrous oxide (N2O), with trimethylantimony (TMSb) as the Sb source. Hydrogen was added to enhance Sb-related PL intensity.
3：List of Experimental Equipment and Materials:
A 190 mW ultraviolet light emitting diode (LED) coupled through a single grating spectrometer, a double grating spectrometer with a resolution of 0.1 meV, and a 20 mW HeCd laser for above-gap excitation.
4：1 meV, and a 20 mW HeCd laser for above-gap excitation.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The growth pressure was 700 Torr with a nitrogen carrier gas flow of 3 standard liters per minute. The nominal growth temperature was 605 °C. PLE spectroscopy was performed with the LED providing a tuning range of 355 to 380 nm.
5：Data Analysis Methods:
Energy spectra were corrected for the index of refraction of air. The donor binding energy was estimated from the relation involving the 1s-2p splitting.
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