摘要： Cs doped non-IPR fullerides have been grown by co-depositing C58 cations and Cs atoms on HOPG. The C58 cages, as building blocks of the material, form a predominantly covalently stabilized scaffold, C58–C58, which is doped by Cs atoms thermally diffusing across the bulk. The heating of the solid CsxC58 sample is accompanied by sublimation of Cs, C58, and C60 species from the topmost layers of the sample. However, the major part (>94%) of the material survives the heating procedure and constitutes a doped high-temperature carbon solid, HT-CsxC58. The new non-IPR material exhibits surprisingly high thermal stability. It survives a heating flash up to 1100 K at which the classic IPR-CsxC60 phase does not exist anymore. However, the thermally treated HT-CsxC58 phase exhibits a considerably depleted Cs content (x < 2) and a significantly modified carbon scaffold. The apparent stability of the scaffold results from covalent C–C bonds interlinking adjacent carbon cages. Cs atoms in the HT-CsxC58 phase contribute to this stability only as minority species, forming comparably weak ionic bonds with C58–C58 oligomers. However, this interaction facilitates the formation of structural defects (new non-IPR sites) in carbon cages. The surface topography of the HT-CsxC58 as monitored by SPEM, AFM, and SEM is governed by islands standing out by their elevated Cs/C ratio.