研究目的
To improve the antireflection and protection of Zinc sulfide (ZnS) under harsh environments by preparing surface sub-wavelength structures (SWSs) and depositing HfO2 films on them.
研究成果
The as-prepared double-sided ZnS SWS with HfO2 has both excellent optical and mechanical properties, increasing far-infrared transmittance, enhancing the hardness and hydrophobicity of bare ZnS, which have good application prospects for infrared optical windows.
研究不足
The study focuses on the preparation and protection of ZnS surface sub-wavelength structures for infrared windows, but the long-term durability and performance under extreme environmental conditions were not extensively tested.
1:Experimental Design and Method Selection:
Dewetting nickel dots as etching mask on ZnS substrates were obtained by thermal annealing of as-sputtered Ni films on the intermediate layers of as-sputtered silicon films. ZnS SWSs were then prepared by inductively coupled plasma (ICP) etching. Finally, HfO2 films were deposited on ZnS SWSs by atomic layer deposition.
2:Sample Selection and Data Sources:
ZnS substrates were used, cleaned by immersing in acetone, methanol, and de-ionized water before sputtering silicon film.
3:List of Experimental Equipment and Materials:
Magnetron sputtering (Sky Technology Development, JGP-450), inductively-coupled plasma etching (ICP, Oxford Instrument Plasma Pro System100 ICP180), atomic force microscopy (AFM; Dimensional Icon Bruker), scanning electron microscopy (SEM; Hitachi S-4700 microscope), spectroscopic ellipsometry (SE; J.A.Woollam M-2000UI), nano-test apparatus (TI750Ubi; Agilent Nano Indenter G200), optical contact angle measuring device (SCA20).
4:0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Silicon films with different thicknesses were sputtered on ZnS substrate. Ni films with different thicknesses were deposited on silicon underlayers by magnetron sputtering. The samples were heated at 700 °C by thermal annealing in Ar for 2 h. The silicon underlayer was etched first by ICP etching. Then the ZnS SWSs were prepared by Cl2/Ar based ICP etching. HfO2 protective film was deposited on the SWSs by ALD method.
5:Data Analysis Methods:
The surface morphologies of the ZnS SWSs were characterized by SEM. The surface roughness of silicon film was measured by AFM. The thickness of HfO2 thin films was obtained by SE. The micro-abrasive wear resistance was tested by using calowear tester. Optical properties of ZnS SWSs were studied by FT-IR transmission spectroscopy. The hardness, elastic modulus, adhesion & wear resistance were characterized using nano-test apparatus. The contact angles were recorded using optical contact angle measuring device.
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Inductively-coupled plasma etching
Plasma Pro System100 ICP180
Oxford Instrument
Etching of silicon underlayer and preparation of ZnS SWSs
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Atomic force microscopy
Dimensional Icon
Bruker
Measurement of surface roughness of silicon film
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Scanning electron microscopy
S-4700
Hitachi
Characterization of the surface morphologies of the ZnS SWSs
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Spectroscopic ellipsometry
M-2000UI
J.A.Woollam
Measurement of the thickness of HfO2 thin films
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Nano-test apparatus
TI750Ubi
Agilent
Characterization of hardness, elastic modulus, adhesion & wear resistance
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Magnetron sputtering
JGP-450
Sky Technology Development
Deposition of silicon and Ni films on ZnS substrates
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Optical contact angle measuring device
SCA20
Measurement of contact angles
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