研究目的
To improve the qualities of gate dielectric/Ge interfaces for practical Ge-MOSFET devices by fabricating Al2O3/Ge structures using direct atomic layer deposition (ALD) on epitaxially grown Ge.
研究成果
Direct ALD on epitaxial Ge without air exposure significantly improves the Al2O3/Ge interface quality by suppressing ALD incubation time and minimizing unintentional GeO2 formation. This method is promising for enhancing Ge MOSFET performances.
研究不足
The study focuses on the Al2O3/Ge interface formed by ALD on epitaxial Ge, and the findings may not be directly applicable to other gate dielectric materials or deposition methods. The impact of different epitaxial growth conditions on the interface quality was not explored.
1：Experimental Design and Method Selection:
The study involves the fabrication of Al2O3/Ge structures by direct ALD on epitaxially grown Ge to investigate the interface properties.
2：Sample Selection and Data Sources:
An n-type Ge (100) substrate was used, with samples prepared under different conditions (with and without air exposure before ALD).
3：List of Experimental Equipment and Materials:
MBE system for Ge epitaxy, ALD chamber for Al2O3 deposition, spectroscopic ellipsometer for thickness estimation, and XPS for chemical bonding analysis.
4：Experimental Procedures and Operational Workflow:
The Ge substrate was chemically cleaned, followed by thermal cleaning and epitaxial Ge growth. Al2O3 was then deposited by ALD under different conditions.
5：Data Analysis Methods:
XPS measurements were used to analyze the chemical bonding states at the Al2O3/Ge interface.
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