研究目的
To compare the analytical modeling of Double Gate Tunnel Field Effect Transistors (DG-TFETs) and Dual Material Double Gate Tunnel Field Effect Transistors (DMDG-TFETs) with high-K stacked gate oxide structure for low power applications.
研究成果
The analytical modeling of both the TFETs with stacked structures are compared and the results of DMDG-TFETs shows a better performance and hence it is used for extreme low power applications. The important electrical parameters such as surface potential, Lateral, vertical Electric field and Drain current were analytically calculated and their performance were compared. The final results are checked with TCAD simulation results and they mostly agrees with each other.
研究不足
The quantum effects are neglected in this work.
1：Experimental Design and Method Selection:
The modeling is done by solving the Poisson’s equation with Parabolic Approximation Technique with suitable boundary conditions. By using channel potential model, Surface potential is calculated. The Drain current model is developed by integrating band to band tunneling generation rate.
2：Sample Selection and Data Sources:
The study compares the electrical characteristics like surface potential, Electric field and Drain current of DG-TFETs and DMDG-TFETs.
3：List of Experimental Equipment and Materials:
High-K stacked gate oxide structure is used in the study.
4：Experimental Procedures and Operational Workflow:
The surface potential was calculated by parabolic approximation method with required boundary conditions. Drain current was calculated using Kanes model.
5：Data Analysis Methods:
The simulations were done by TCAD. The analytical results are compared with TCAD simulation results.
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