研究目的
Investigating the effects of process parameters on surface roughness in wet-activated silicon direct bonding.
研究成果
The concentration of the activation solution had the most significant effect on surface roughness, with higher concentrations leading to lower roughness. Holding time also affected roughness, but to a lesser extent, while treatment temperature had a weak correlation with surface roughness. An optimized wet-activated process was designed based on these findings, which proved effective in achieving high-quality silicon direct bonding.
研究不足
The study focuses on the effects of process parameters on surface roughness in wet-activated silicon direct bonding. The limitations include the specific conditions and materials used in the experiments, which may not cover all possible scenarios in industrial applications.
1：Experimental Design and Method Selection:
Orthogonal experiments were designed to investigate the effects of the concentration of activation solution, holding time, and treatment temperature on surface roughness. The bear ratio was used as the evaluation index for surface roughness.
2：Sample Selection and Data Sources:
4-inch silicon wafers with the crystal orientation of <100> were used as test samples. The wafers were cleaned and treated with various chemical solutions before bonding.
3：List of Experimental Equipment and Materials:
Atomic Force Microscope (AFM) for measuring surface roughness, acetone and SPM for cleaning, dilute hydrofluoric acid for removing native oxide layer, RCA-1 solution for activation, and deionized water for rinsing.
4：Experimental Procedures and Operational Workflow:
Wafers were cleaned, treated with chemical solutions, and then bonded. The surface roughness was measured using AFM.
5：Data Analysis Methods:
The results of the orthogonal experiments were analyzed using intuitive analysis method to reveal the effects of the different parameters on surface roughness.
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