研究目的
Studying the effect of electron irradiation on the electrical and magnetic parameters of (HgSe)3(In2Se3)<Mn> crystals.
研究成果
Irradiation of (HgSe)3(In2Se3)<Mn> crystals by electrons with an energy of Ee = 10 MeV and a dose of D = 1016 cm–2 only slightly affects their transport and magnetic properties, indicating their high radiation resistance.
研究不足
The study is limited to the effects of electron irradiation on (HgSe)3(In2Se3)<Mn> crystals and does not explore other types of radiation or materials.
1：Experimental Design and Method Selection:
The study involved irradiating (HgSe)3(In2Se3)<Mn> crystals with high-energy electrons and analyzing their electrophysical and magnetic properties before and after irradiation.
2：Sample Selection and Data Sources:
Crystals were grown by the Bridgman method from a pre-synthesized material with a manganese concentration ~1020 cm–
3：List of Experimental Equipment and Materials:
SEM-106 scanning electron microscope, electron accelerator in an ECM microtron, copper-constantan thermocouple.
4：Experimental Procedures and Operational Workflow:
Samples were irradiated with electrons (Ee = 10 MeV, dose D = 1016 cm–2), and their temperature dependences of electrical conductivity and Hall coefficient were measured.
5：Data Analysis Methods:
The temperature dependences of electrical conductivity and magnetic susceptibility were analyzed to assess the impact of irradiation.
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