研究目的
To optimize the PEALD process for preparing nickel oxide (NiO) thin films using bis(ethylcyclopentadienyl)-nickel (Ni(EtCp)2) and O2 plasma, and to examine the effects of various parameters on the film growth.
研究成果
The PEALD process using Ni(EtCp)2 and O2 plasma was optimized, resulting in NiO thin films with a constant growth rate of 0.037±0.002 nm per cycle over a wide temperature range of 100-325 oC. The films exhibited excellent conformality and linearity with respect to the number of PEALD cycles, without nucleation delay. The process parameters were systematically investigated to achieve uniform and high-quality NiO films.
研究不足
The study focused on optimizing the PEALD process for NiO thin films but did not explore the application of these films in specific devices or the long-term stability of the films under operational conditions.
1：Experimental Design and Method Selection:
The PEALD process was used to deposit NiO thin films on silicon substrates. The effects of precursor pulsing time, purging time, O2 plasma exposure time, and plasma power were examined.
2：Sample Selection and Data Sources:
Silicon substrates with a crystal orientation of (100) were used.
3：List of Experimental Equipment and Materials:
A homemade vertical-flow shower-head type PEALD chamber, Ni(EtCp)2 precursor, O2 plasma system, and argon gas were used.
4：Experimental Procedures and Operational Workflow:
The deposition cycle consisted of precursor pulsing, main purging, bypass purging, oxygen plasma exposure, and Ar purging.
5：Data Analysis Methods:
The thickness of the films was measured using ellipsometry, crystallinity was confirmed via GIXRD, elemental composition was analyzed using XPS, and conformality was investigated via HR-SEM.
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