研究目的
To investigate the influence of electrical and electrophysical parameters and characteristics of Schottky diodes (SD) and fundamental parameters of Schottky contact on the value of high-temperature limit of operation (TM) in diode temperature sensors (DTS) samples based on 4H-SiC SD both experimentally and theoretically, as well as to determine the limiting values of TM and limiting forward currents corresponding to them.
研究成果
The DTS based on Schottky contact Me/n-SiC(4H) with current flow dominated by over-barrier thermionic emission could become an alternative for commercial silicon p-n junction DTS, offering significantly higher high-temperature operation limits and lower power consumption. The developed model allows for the calculation of basic parameters and characteristics of SD DTS, providing a foundation for further development of high-temperature semiconductor devices.
研究不足
The study focuses on DTS based on Schottky diodes with current flow dominated by over-barrier thermionic emission. The applicability of the findings to other types of diodes or current flow mechanisms is not explored. Additionally, the experimental validation was limited to a specific range of temperatures and currents.
