研究目的
Investigating the nucleation of diindenoperylene (DIP) and pentacene on SiO2 at thermal and hyperthermal incident kinetic energies to understand the effect of incident kinetic energy on the nucleation process and island density.
研究成果
The nucleation of DIP and pentacene on SiO2 is homogeneous and the maximum island density is determined by the growth rate, independent of the incident kinetic energy. The critical nucleus size for DIP is approximately two molecules, indicating that diffusive transport of molecules to the growing islands dominates the dynamics of growth in the submonolayer regime.
研究不足
The study is limited to the nucleation of DIP and pentacene on SiO2 at specific substrate temperatures and incident kinetic energies. The effect of incident kinetic energy on nucleation may vary for other organic semiconductors or substrates.
1：Experimental Design and Method Selection:
The study employed atomic force microscopy (AFM) to examine the nucleation of DIP and pentacene on SiO
2：Both thermal and supersonic molecular beam sources were used to vary the incident kinetic energy of the molecules. Sample Selection and Data Sources:
Substrates were cleaved from Si (100) wafers, cleaned, and degreased before the growth of approximately 300-nm-thick SiO2 films by wet thermal oxidation.
3：List of Experimental Equipment and Materials:
A custom-designed UHV chamber, supersonic molecular beam source, thermal effusion source, atomic force microscope (Digital Instruments DI-3100), and synchrotron x-ray scattering were used.
4：Experimental Procedures and Operational Workflow:
Submonolayer thin films of pentacene and DIP were deposited for a range of different growth rates and incident kinetic energies. The growth was monitored using real-time in situ synchrotron x-ray scattering.
5：Data Analysis Methods:
The island density and total film coverage were determined from AFM images. The dependence of the maximum island density on the growth rate was analyzed using a power law.
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