研究目的
To fabricate high-Q-factor nanobeam photonic crystal cavities in bulk silicon carbide without material-based optical absorptions.
研究成果
The study achieved the highest recorded Q factor of 4 (cid:2) 104 in crystalline SiC cavities by avoiding optical absorption through the use of a crystalline SiC bulk wafer and oblique plasma etching. The potential for higher Q factors exists with reduced structural imperfections.
研究不足
The experimental Q factors are lower than the designed Q factors due to structural imperfections such as the relative shift of the air hole line and surface roughness of the nanobeam sidewalls.
1：Experimental Design and Method Selection:
The study employed oblique plasma etching to fabricate nanobeam photonic crystal cavities directly from a crystalline SiC bulk wafer.
2：Sample Selection and Data Sources:
A 4H SiC bulk wafer was used.
3：List of Experimental Equipment and Materials:
High-purity semi-insulator SiC wafer, electron beam lithography, nickel mask, plasma etching system.
4：Experimental Procedures and Operational Workflow:
The process involved patterning the nanobeam, evaporating a nickel layer, vertical and oblique plasma etching, and removing the nickel mask.
5：Data Analysis Methods:
The Q factors were measured using a wavelength tunable laser source and an infrared camera.
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