研究目的
Investigating the fabrication and performance of flexible IGZO TFTs and inverters on PET substrates for potential applications in flexible logic circuits.
研究成果
The fabricated flexible IGZO TFTs and inverters demonstrate high mobility and gain, indicating their potential for use in flexible logic circuits. The devices also show good performance after repeated bending, suggesting reliability for flexible applications.
研究不足
The low-temperature fabrication process may lead to higher leakage currents compared to conventional high-temperature processes.
1：Experimental Design and Method Selection:
Fabrication of IGZO TFTs and inverters on PET substrates using a low-temperature process.
2：Sample Selection and Data Sources:
Use of hydroxylated polyethylene terephthalate (PET) substrate and IGZO material.
3：List of Experimental Equipment and Materials:
Includes PECVD for SiO2 deposition, RF sputtering for Mo and IGZO deposition, and RIE for etching.
4：Experimental Procedures and Operational Workflow:
Detailed steps from substrate preparation to device characterization, including a two-step annealing method.
5：Data Analysis Methods:
Characterization of electrical properties using an Agilent Technology B1500A semiconductor parameter analyzer.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
