研究目的
To develop a pH sensor with a high sensitivity by investigating suitable sensing membranes, including materials with large electrical permittivity (high-k), for EGFETs with DG structures.
研究成果
The Ta2O5 sensing membrane exhibited the highest sensitivity (478 mV/pH), low hysteresis (100.2 mV), and drift rate (24.6 mV/h) in DG-mode, making it suitable for high-performance biosensor applications due to its stability and reliability.
研究不足
The study focuses on the performance of EGFET pH sensors with DG structures and high-k sensing membranes, but does not explore the integration of these sensors into complete biosensor systems or their performance in real-world applications.
1：Experimental Design and Method Selection:
Fabrication of DG-type FET transducers and EG sensors with various dielectric sensing membranes.
2：Sample Selection and Data Sources:
Use of SiO2, Si3N4, HfO2, and Ta2O5 as dielectric layers for sensing membranes.
3：List of Experimental Equipment and Materials:
SOI wafer, RF magnetron sputtering, LPCVD, RIE, e-beam evaporator, Agilent 4156B semiconductor parameter analyzer, Agilent 4284A LCR meter.
4：Experimental Procedures and Operational Workflow:
Fabrication of transducers and detectors, measurement of I-V and C-V characteristics, evaluation of sensitivity, hysteresis, and drift characteristics.
5：Data Analysis Methods:
Calculation of sensitivity from transfer curves, evaluation of hysteresis and drift effects.
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