研究目的
Investigating the epitaxial growth of undoped and Li-doped NiO thin films on α-Al2O3 substrates by mist chemical vapor deposition for potential applications in wide-bandgap oxide semiconductors.
研究成果
NiO thin films were successfully epitaxially grown on α-Al2O3 substrates by mist CVD, demonstrating bi-epitaxial growth with crystallographic orientation relationships. Li doping effectively reduced the electrical resistivity and confirmed p-type conductivity, indicating the potential for Li-doped NiO thin films in semiconductor applications.
研究不足
The study focuses on the epitaxial growth and characterization of NiO thin films, with limited discussion on the scalability of the mist CVD method for industrial applications and the long-term stability of the Li-doped NiO thin films.
1：Experimental Design and Method Selection:
The mist chemical vapor deposition (CVD) method was utilized for the epitaxial growth of NiO thin films on α-Al2O3 substrates.
2：Sample Selection and Data Sources:
α-Al2O3 (0001) substrates were annealed and washed prior to the growth of NiO. Precursor solutions included nickel acetylacetonate (Ni(acac)2) for undoped NiO and lithium acetylacetonate (Li(acac)) or lithium hydroxide (LiOH) for Li-doped NiO.
3：List of Experimental Equipment and Materials:
X-ray reflectivity (XRR) measurements and X-ray diffraction (XRD) analyses were carried out using a Panalytical X’pert PRO MPD system. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used for surface morphology and cross-sectional observations, respectively.
4：Experimental Procedures and Operational Workflow:
The growth temperature was optimized at 650 °C. The in-plane orientation relationship between NiO and α-Al2O3 was established by X-ray pole figure measurements.
5：Data Analysis Methods:
The optical bandgap was calculated from transmittance spectra, and electrical resistivity was determined by the four-terminal method.
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