摘要： We used atomic force microscopy to characterize the surface topography of p-GaN exposed to N2 and NH3 plasma under quasi-atmospheric pressure using a microwave-excited plasma source with a microstrip line structure. The exposure time was varied from 2 to 20 min at a substrate temperature of 700 °C. Under both N2 and NH3 plasma exposure for 2 min, the ridge-shaped features on the surface of as-grown p-GaN dulled immediately and the surface roughness decreased remarkably, whereas the atomic step structure of the surface was maintained. The step crossing and bunching of the surface disappeared with increasing exposure time to both types of plasma. However, increasing the NH3 plasma exposure time to 20 min led to the formation of pits and appearance of particles along the step edges, resulting in drastic roughening of the surface. Thus, GaN surfaces can be smoothed without the destruction of their step structures via moderate plasma exposure under quasi-atmospheric pressure, and these plasma sources could prospectively be used in metal-organic chemical vapor deposition systems for nitride semiconductor growth.