研究目的
Investigating the growth and properties of Al doped In2O3 nanowires and their transformation into β-In2S3 nanowires with near infra red emission after sulfur doping.
研究成果
The study demonstrates the successful growth of Al doped In2O3 nanowires and their transformation into β-In2S3 nanowires with near infra red emission after sulfur doping. The nanowires maintain their one-dimensional nature up to 900?C, making them suitable for high-temperature nanowire sensors. The near IR PL is attributed to deep donor to acceptor transitions in β-In2S3.
研究不足
The Al is not incorporated into the cubic bixbyite crystal structure of In2O3, limiting the direct doping effects. The resistance of the nanowires increases after processing under H2S above 500?C, changing from metallic to insulator like, which may limit device applications.
1：Experimental Design and Method Selection:
Growth of Al doped In2O3 nanowires via the vapor-liquid-solid mechanism at 800?C using Au as a catalyst. Post-growth processing under H2S at various temperatures to study the transformation into β-In2S3 nanowires.
2：Sample Selection and Data Sources:
Al/In2O3 nanowires grown on Si(001) at 800?C using Au as catalyst. Characterization by SEM, GIXD, EDX, TEM, and PL measurements.
3：List of Experimental Equipment and Materials:
Low-pressure chemical vapour deposition (LPCVD) system, SEM, GIXD, EDX, TEM, PL setup with 266 nm excitation, Keithley 2635A for resistance measurements.
4：Experimental Procedures and Operational Workflow:
Growth of nanowires, exposure to H2S at different temperatures, characterization of structural, electrical, and optical properties.
5：Data Analysis Methods:
Analysis of GIXD and TEM data for crystal structure, EDX for composition, PL for optical properties, and resistance measurements for electrical properties.
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