研究目的
To evaluate the minority photocarriers diffusion length (Lp) of hydrogenated amorphous silicon (a-Si:H) using the steady-state surface photovoltage technique (SPV) and to propose a formula to predict more accurately minority diffusion length Lp depending on apparent diffusion length (Lapp) and space charge width (W).
研究成果
The study concludes that the SPV method applied on a-Si:H is still usable to evaluate the minority diffusion length in amorphous silicon based Schottky structures. Using the proposed analytical relation to evaluate the correct diffusion length Lp, it would be interesting to determine experimentally the Lp when the apparent diffusion length Lapp and the space charge width W are simultaneously measured under the same experimental conditions.
研究不足
The SPV method shows difficulty in evaluating the true minority photocarriers diffusion length (Lp) of hydrogenated amorphous silicon (a-Si:H) when the space charge region is reduced. The study also highlights the limitations of the SPV technique in amorphous semiconductors such as a-Si:H due to low carrier mobilities.
