研究目的
To study the drift processes in AlxGa1-xAs during the pulsed action of the electric field and to expand the information regarding the impulse properties of this material.
研究成果
The pulse-like change of the high electric field in Al0.225Ga0.775As causes a short "overshoot" of the drift velocity. An increase of the amplitude of the rectangular pulse of the strong electric field leads to the increase of the peak value, and to the reduction of the duration of the "overshoot" vdr. From the viewpoint of speed, the three-component Al0.225Ga0.775As semiconductor is inferior to GaAs.
研究不足
The discrepancy between the modeled field-velocity characteristics vdr(E) is due to the differences between the values of a number of constants taken from the literature. The effect of the negative "undershoot" of the drift velocity is very weakly expressed for high fields.
1：Experimental Design and Method Selection:
A numerical experiment was carried out using a technique based on the relaxation equations for the conservation of momentum, energy, and concentration. The calculations are based on the two-valley (ΓL)-model.
2：Sample Selection and Data Sources:
The initial values of the material parameters, for AlxGa1-xAs at x =
3：225, are determined from literature and the approximations are described in references. List of Experimental Equipment and Materials:
Not explicitly mentioned.
4：Experimental Procedures and Operational Workflow:
The system of equations is solved for each valley by the fourth-order Runge-Kutta method with the use of Mathcad, and the results are averaged taking into account the population of the valleys.
5：Data Analysis Methods:
The results of numerical modeling are compared with experimental results and theoretical dependencies from literature.
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