研究目的
To determine porosity and obtain information about the morphology of the porous oxide films using GISAXS and EIS techniques.
研究成果
GISAXS and EIS analyses were effective and permitted to show the influence of UV cure and in situ Si coating on the porous oxide film. The porosity of the films was determined to be approximately 13%, with mostly spherical pores of radius approximately 5 nm.
研究不足
Standard ellipsometric porosimetry was not able to determine porosity nor pore size. The high moisture content in the films inhibited analysis by porosimetry and C-V measurements.
1：Experimental Design and Method Selection:
Reactive sputtering was used to deposit porous oxide films. Some samples received UV cures and/or a Si cap.
2：Sample Selection and Data Sources:
Films were deposited on 300 mm Si wafers.
3：List of Experimental Equipment and Materials:
PVD sputtering system, spectroscopic ellipsometry (SE), FTIR, GISAXS at the Brazilian Synchrotron Light Laboratory (LNLS), Pilatus detector, AUTOLAB equipment for EIS.
4：Experimental Procedures and Operational Workflow:
Thickness and refractive index were measured by SE. FTIR absorbance spectra were measured. GISAXS was used to measure total porosity and pore size. EIS measurements were performed with a
5：5 cm2 area of porous oxide films exposed to 1M H2SOData Analysis Methods:
GISAXS data were transformed to one-dimensional profiles and fitted using the generalized Ornstein-Zernike relationship. EIS data were analyzed to determine equivalent resistance and capacitance.
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