研究目的
To improve the reliability of a nonvolatile memory device with a graphene-ferroelectric hybrid membrane by mitigating the surface roughness of the ferroelectric layer.
研究成果
The data retention time of a graphene-ferroelectric memory device can be significantly improved by mitigating the surface roughness of the ferroelectric layer. This is achieved through a double-coating method, which results in a much flatter surface compared to a single-coating method. The study confirms the importance of interface treatment in the fabrication of reliable graphene-ferroelectric memory devices.
研究不足
The study focuses on the interface between graphene and the gate dielectric, and the improvement in data retention time is attributed to the mitigation of surface roughness. However, other factors affecting the performance of the memory device are not explored.
1：Experimental Design and Method Selection:
A ferroelectric-gated graphene field-effect transistor was fabricated with a bottom-gate structure. The ferroelectric gate dielectric was formed using the spin-coating method. Two samples were made, one with a single coating and the other with a double coating.
2：Sample Selection and Data Sources:
The wafer on which the silicon oxide film was thermally grown was used as a substrate, and aluminum was deposited using a shadow mask to form the gate, source and drain electrodes.
3：List of Experimental Equipment and Materials:
Poly (vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), manufactured by Elf Atochem, and poly (melamine-co-formaldehyde), PMF, purchased from Sigma-Aldrich were used. A magnetic stirrer was used for mixing.
4：Experimental Procedures and Operational Workflow:
The mixture was stirred for ten hours using magnetic stirrer to ensure homogeneous mixing. The mixing solution of P(VDF-TrFE) and PMF was spin-coated onto the substrate, on which the electrode was formed to form a 1-μm-thick film. This was then thermally treated at 130 °C for one hour on a hot plate.
5：Data Analysis Methods:
The surface morphologies of the gate dielectrics fabricated with a single coating and a double coating were observed by means of atomic force microscopy (AFM).
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