摘要： Photoresists are an indispensable technology used for manufacturing electronic devices such as displays and semiconductors. In this study, we investigated the relationship between C=C double bond conversion and dissolution kinetics in cross-linking-type photoresists used for display manufacture using real-time Fourier transform infrared spectroscopy (FTIR) and quartz crystal microbalance (QCM) methods. To improve photoresist performance, it is important to understand the development mechanism of photoresists. Two kinds of polymers (a polymer with peeling-type dissolution and a polymer with a dissolution type with Case II diffusion) were used. 1,2-Octanedione-1-[4-(phenylthio)-2-(O-benzoyloxime)] and bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide were used as photoinitiators. The dissolution was of the peeling type when the polymers were formulated as a typical cross-linking-type photoresist. With increasing conversion ratio of C=C double bonds, the rate of developer intake decreased and the impregnation threshold before the onset of peeling increased and then decreased. It was also found that the dissolution kinetics were affected by the radicals generated upon the decomposition of photoinitiators.