研究目的
Investigating the effect of gas phase temperature on the growth of InGaN/GaN multiple quantum wells (MQWs) by metalorganic vapor phase epitaxy (MOVPE) to improve the optical properties of high-indium-content MQWs.
研究成果
The use of a large-gap wafer tray in a horizontal MOVPE reactor improves the optical properties of InGaN/GaN MQWs by increasing the gas phase temperature, which enhances the effective V/III ratio at the surface due to more active nitrogen species. This method is promising for improving the quality of high-In-content InGaN.
研究不足
The study is limited to the effects observed within the specific conditions of the MOVPE reactor used, and the generalizability of the findings to other reactor designs or conditions is not explored.
1：Experimental Design and Method Selection:
Used wafer trays with different gaps to control the difference between the wafer surface temperature and gas phase temperature.
2：Sample Selection and Data Sources:
Five-period InGaN/GaN MQWs emitting wavelengths of 450 nm, 500 nm, and 550 nm were grown on 2-inch GaN/sapphire templates.
3：List of Experimental Equipment and Materials:
Triethylgallium (TEGa), trimethylindium (TMIn), NH3, N2, and Trimethylgallium (TMGa) were used.
4：Experimental Procedures and Operational Workflow:
The barrier growth involved three parts: growth at the well temperature as a protection layer, growth during the temperature ramp, and growth at the barrier temperature.
5：Data Analysis Methods:
X-ray diffraction (XRD) was used to confirm the target indium contents, and photoluminescence (PL) and atomic force microscope (AFM) were used to measure the optical properties and surface morphology.
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