研究目的
Investigating the formation, properties, and evolution of ultrathin silica polymorphs on Ru(0001) to understand the parameters that steer the evolution to specific well-defined layers.
研究成果
The study successfully investigated the formation and evolution of ultrathin silica polymorphs on Ru(0001), identifying the oxygen content at the Ru interface as a critical parameter for steering the evolution to specific well-defined layers. The nucleation and growth of all layers were found to be homogeneous on the scale of the resolution, leading to small domains mostly of the same phase, separated by defect lines. The findings contribute to a deeper understanding of the fundamental properties of silica films in a controlled environment and offer alternative recipes for the preparation of more homogeneous layers.
研究不足
The technical and application constraints include the spatial resolution limit of the LEEM imaging (below 5 nm), the need for careful control of oxygen pressure and temperature during preparation, and the potential for radiation-induced changes or damage by the primary beams of electrons or photons.
1:Experimental Design and Method Selection:
The study uses the SMART spectro-microscope at BESSY-II for μ-spectroscopy, μ-diffraction, and LEEM imaging with lateral resolution below 5 nm, applied in situ and in real time to identical areas.
2:Sample Selection and Data Sources:
The Ru(0001) single crystal was prepared by cycles of Ar+ sputtering at room temperature and annealing in oxygen at 1170 K, with a final heating to 1350 K in UHV.
3:List of Experimental Equipment and Materials:
The SMART apparatus, Ru(0001) single crystal, oxygen (
4:999%), silicon (999%), Omicron EFM3 evaporator. Experimental Procedures and Operational Workflow:
Silicon was deposited onto the Ru(0001) substrate precovered with a 3O layer at room temperature and in 2×10-7 mbar O2, followed by annealing to variable final temperatures depending on the desired silica polymorph, usually in 5×10-6 mbar of oxygen.
5:Data Analysis Methods:
LEED patterns, spot intensities during preparation steps, XPS for qualitative and quantitative atomic analysis, LEEM-IV curves for determination of work function changes and fingerprinting of layer situations, and LEEM for in situ imaging of the surface.
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