研究目的
Demonstrating non-contact and non-destructive electrical conductivity measurements of nitrogen doped nano-crystalline diamond films using a microwave cavity perturbation system.
研究成果
The study demonstrated a non-contacting probe for fast and non-invasive evaluation of the electrical conductivity of nitrogen doped NCD films. The technique is invaluable for quickly determining how growth parameters affect the overall electrical conductivity of the film without damaging the film.
研究不足
The lower measurement limit in conductivity is determined by the microwave dielectric properties of the sample substrate. The technique is only useful for examining electrically conducting NCD films that greatly exceed the conductivity of the substrate.
1:Experimental Design and Method Selection:
The study used a microwave cavity perturbation system for non-contact and non-destructive electrical conductivity measurements. The conductivity of the films was controlled by varying the CH4 gas concentration during microwave plasma assisted chemical vapour deposition.
2:Sample Selection and Data Sources:
Nitrogen doped nano-crystalline diamond films were grown on n-type Si (100) substrates. The films were characterized using SEM, Raman spectroscopy, XPS, and EELS.
3:List of Experimental Equipment and Materials:
The MCP measurements were carried out using an aluminium rectangular microwave cavity resonator. The films were grown in an ASTeX 6500 series MPCVD reactor.
4:Experimental Procedures and Operational Workflow:
The films were placed in the microwave cavity, and the perturbation caused by the films was measured. The conductivity was extracted through a depolarisation model.
5:Data Analysis Methods:
The changes in frequency and Q factor were analyzed to infer the electrical conductivity of the films.
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