研究目的
Design and fabrication of a L band solid-state high power amplifier using GaN Transistor as the main active high power element.
研究成果
A high power output of 100 watt is achieved using a combination of 3 stage amplifier with GaN transistor of NXP as the main high power stage. The designed networks ensure desired power output and good matching for connection to the matched 10 watt TriQuint power amplifier. The fabricated system confirms the existence of 100 watt power output.
研究不足
High power consumption leading to high temperature and heat generation, requiring heat sink and fan for temperature control. Measurement system faults causing ripples in output power measurements.
1：Experimental Design and Method Selection:
The design involves a three-stage amplifier with GaN technology for high power output. ADS simulation is used for optimizing input and output matching networks.
2：Sample Selection and Data Sources:
Utilizes NXP GaN transistor, TriQuint product for medium power, and MACOM GaAs MMIC for input stage.
3：List of Experimental Equipment and Materials:
Includes NXP GaN transistor, TriQuint amplifier, MACOM amplifier, Rogers4003 and Taconic boards for RF implementation, and FR4 board for bias module.
4：Experimental Procedures and Operational Workflow:
Involves designing matching networks, implementing the amplifier on different substrates, and using a bias module for sequential voltage application.
5：Data Analysis Methods:
Harmonic balance simulation for large signal performance estimation and EM simulator capability of ADS for optimization.
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