研究目的
To achieve the precise control of the electronic properties of the a-C films for the realization of the solar cell devices, the clarification of the effects of radicals on the bonding structure and electronic properties is required.
研究成果
The sp2 fraction of the a-C films was found to depend on the CH3 radical density, reaching a minimum at a residence time of 6 ms. This knowledge is useful for understanding the formation mechanism and bonding structures of the a-C films, enabling precise control of their electronic properties.
研究不足
The study focuses on the effects of CH3 radicals on the sp2 fraction of a-C films, but other radical species and their interactions were not fully explored. The plasma discharge characteristics were assumed to remain constant with changes in gas flow rates, which may not account for all variations in plasma parameters.
1：Experimental Design and Method Selection:
The study used a radical-injection PECVD (RI-PECVD) system with two plasma sources vertically stacked and connected through a showerhead electrode. The upper part consists of the surface wave plasma (SWP), and the lower part consists of the parallel-plate capacitively coupled plasma (CCP).
2：Sample Selection and Data Sources:
Quartz substrates with a thickness of 0.5 mm and an area of 15 mm2 were used for the a-C film deposition.
3：5 mm and an area of 15 mm2 were used for the a-C film deposition.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Quadrupole mass spectrometer (Hiden Analytical EQP 500), optical emission spectrometer (Ocean Optics HR2000CG), high-voltage probe (Tektronix P6015A), and digital oscilloscope.
4：Experimental Procedures and Operational Workflow:
The CH3 radical density was measured using appearance mass spectrometry. The sp2 fraction of the a-C films was analyzed as a function of residence time.
5：Data Analysis Methods:
The CH3 radical density was calculated from the mass spectrometer output, and the sp2 fraction was determined from previous studies.
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