研究目的
Investigating the Fano resonance between coherent acoustic phonon oscillations and electronic states near the bandgap of photoexcited GaAs.
研究成果
The study presents the first observation of Fano resonance between the electronic states and CLAP oscillation in GaAs single crystal. The lineshape of the oscillations shows pronounced asymmetry close to the bandgap, indicative of Fano resonance. This finding is significant for the field of picosecond ultrasonics and for understanding electron-phonon interactions in semiconductors.
研究不足
The study is limited to intrinsic GaAs (100) and does not explore the effects of doping or capping layers on the observed phenomena. The high pump fluence used may not be representative of all experimental conditions.
1:Experimental Design and Method Selection:
The study used two-colour pump-probe spectroscopy with a 400 nm pump pulse to observe coherent longitudinal acoustic phonon (CLAP) oscillations in intrinsic GaAs (100) single crystal wafers.
2:Sample Selection and Data Sources:
Intrinsic undoped GaAs (100) oriented wafer polished on both sides was used.
3:List of Experimental Equipment and Materials:
A tuneable Optical parametric Amplifier (OPA, Orpheus + SHG, Light Conversion) pumped by a 1030 nm 9 W regenerative amplifier (Pharos, Light Conversion) with a nominal pulse width of ~230 fs and at the repetition rate of 125 KHz. A customized, commercial pump-probe spectrometer Harpia (Light Conversion) was used.
4:Experimental Procedures and Operational Workflow:
The pump and probe pulses were focused on the sample, with the probe delayed in steps to collect transient data up to 2000 ps. The differential reflectance of the probe was measured.
5:Data Analysis Methods:
The oscillatory data was fitted to an equation to extract frequency, decay constant, and phase. Fourier transform of the time domain oscillations was carried out to analyze the lineshape.
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