研究目的
To quantitatively prove the postulation that water vapor provides hydrogen that dissolves into the ferritic alloy substrate, altering their electronic state at the metal-semiconductor (oxide) interface by comparing their Schottky’s Barrier Height (SBH) in dry and wet environment.
研究成果
The SBH in wet, with the presence of dissolved hydrogen, is increased by 10.3% compared with dry condition, indicating that dissolved hydrogen alters the electronic state of the sample and may induce variation in transport property, thus accelerating the oxidation rate.
研究不足
The study is a preliminary result, and further work is required to explain the relationship between space charge layer and cation/anion transport through this boundary quantitatively.
1：Experimental Design and Method Selection:
The study involved preparing Schottky’s barrier by sputtering Cr2O3 onto the T91 boiler tube in high vacuum condition using RF power 150W for an hour. The T91/Cr2O3 junction was then connected with platinum wire for capacitance-voltage, C-V test at high temperature.
2：Sample Selection and Data Sources:
Boiler tube of T91 was used as substrate for C-V measurement. Samples were prepared by cutting, grinding, and polishing, followed by sputtering with Chromium and coating with gold as current collecting electrodes.
3：List of Experimental Equipment and Materials:
RF magnetron sputtering machine, AUTOLAB PGSTAT302N potentiostat/galvanostat, R-type thermocouple, Argon gas, Hydrogen gas.
4：Experimental Procedures and Operational Workflow:
Samples were oxidized in dry and wet environments at various temperatures, and C-V measurements were conducted at each temperature.
5：Data Analysis Methods:
The built in voltage, Vbi, was determined from the C-V measurement, and the Schottky’s Barrier Height (SBH) was calculated using the value of Vbi.
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