研究目的
Exploring modelling nonlinear characteristics of circuits containing semiconductor devices by presenting a modified physically based simulation method.
研究成果
The physically based approach demonstrates a great capacity of accurately revealing devices' nonlinear properties and providing clear physical pictures for those properties, making it a powerful tool for semiconductor and distributed circuit analysis.
研究不足
The study acknowledges the limitations of equivalent or analytical models in high-power or high-frequency applications and their lack of direct physical interpretation for physical phenomena.
1：Experimental Design and Method Selection:
The study employs a modified physically based simulation method to model nonlinear characteristics of a p-i-n diode microstrip circuit.
2：Sample Selection and Data Sources:
A commercial p-i-n diode with model number mot bal99lt1 is used as a sample.
3：List of Experimental Equipment and Materials:
The study uses a CETC power meter AV2432 with an Agilent vector signal generator E8267C for measurement, and a Tektronix TDS1012 oscillograph for terminal voltage measurement.
4：Experimental Procedures and Operational Workflow:
The method involves solving a set of macroscopic equations for semiconductor devices and coupling them with distributed structures using a circuit-field co-simulation model.
5：Data Analysis Methods:
The simulation results are compared with measurement data to validate the method's accuracy.
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