研究目的
To investigate the sources of negative capacitance or negative dielectric constant at accumulation region in the wide frequency range of 5–5000 kHz on Al/PVA(7% Zn-doped)/p-Si (MPS)-type capacitors and to study the real and imaginary components of complex dielectric constant (e*), electric modulus (M*) and ac conductivity both as function of frequency and applied bias voltage.
研究成果
The dielectric characteristics of Al/PVA(7% Zn-doped)/p-Si (MPS) capacitors are highly sensitive to frequency and applied bias voltage, especially in the accumulation and depletion regions. The changes in dielectric properties are attributed to interfacial and dipole polarization, surface states, and series resistance. The effects of these factors must be considered in determining dielectric parameters, electric modulus, conductivity, and conduction mechanisms in capacitors with and without an interfacial layer.
研究不足
The study is limited to room temperature measurements and does not explore the effects of temperature variations on the dielectric properties. Additionally, the physical mechanisms of negative capacitance require further research.