研究目的
To review the application of second harmonic generation (SHG) for non-destructive characterization of dielectric-semiconductor interfaces in microelectronics and photovoltaics, focusing on accessing the electric field at interfaces and measuring interface state densities or fixed charges in oxides.
研究成果
SHG is a non-destructive, sensitive technique suitable for characterizing dielectric-semiconductor interfaces, particularly for thin films. It provides insights into interface electric fields, fixed charges, and trap densities. The method's effectiveness is demonstrated through studies on Al2O3/Si passivation and SOI substrates, highlighting its potential for microelectronics and photovoltaics.
研究不足
The technique requires understanding and de-correlating optical phenomena from electrical properties for quantitative characterization. The study is limited to specific applications (Al2O3/Si and SOI) and may need extension to other materials and interfaces.
1：Experimental Design and Method Selection:
The study utilizes second harmonic generation (SHG) based on non-linear optics for non-destructive characterization. Theoretical background and practical applications are discussed.
2：Sample Selection and Data Sources:
Samples include alumina layers on silicon (Al2O3/Si) for passivation quality evaluation and silicon-on-insulator (SOI) substrates for interface analysis.
3：List of Experimental Equipment and Materials:
Commercial tool Harmonic F1X from Femtometrix, pump laser of 780 nm wavelength, femtosecond pulses, and various SOI and Al2O3/Si samples.
4：Experimental Procedures and Operational Workflow:
SHG measurements are performed with varying incident power, wavelength, polarization, angle of incidence, and azimuthal angle of the sample to access different information.
5：Data Analysis Methods:
Optical propagation phenomena in multilayer structures are modeled to interpret SHG signals, including the impact of interface electric fields.
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