摘要： A method for superimposing a microwave frequency comb (MFC) on the DC tunneling current in a scanning tunneling microscope (STM) is described in which a mode-locked laser is focused on the tunneling junction. The MFC is caused by optical rectification of the regular sequence of laser pulses due to the nonlinear current-voltage characteristics of the tunneling junction. Hundreds of harmonics, at integer multiples of the laser pulse-repetition frequency, are generated with a metal tip and sample. However, the harmonics have less power with a resistive sample due to the loss in its spreading resistance. The microwave power is greatest at a tip-sample distance that is unique for each sample resistivity. This distance may be set by using different pairs of the applied DC bias and the set-point for the DC tunneling current. However, the laser, and not the applied DC bias or the DC tunneling current, is the source of energy for the MFC so they are not required. Feedback control of the tip-sample distance may be based on maximizing the attowatt-level microwave power of the harmonics, which have a signal-to-noise ratio of 20 dB. This method shows promise for nondestructive carrier profiling of semiconductors with true sub-nanometer resolution which is essential in the continued progress below the 40-nm technology node. It may enable carrier profiling with 2-D materials such as graphene, and it also shows promise for finer resolution in images of biological materials or other resistive samples.