研究目的
To develop a 286 nm monolithic multicomponent system on a III-nitride-on-sapphire platform for diverse applications in the deep-ultraviolet (DUV) range, enabling on-chip optical communication between two identical MQW-diodes.
研究成果
The 286 nm monolithic multicomponent system successfully demonstrates on-chip optical communication between two identical MQW-diodes using a waveguide, achieving a spatial light transmission at 50 Mbps. This system paves the way for advanced information systems towards the Internet of Things in the DUV region.
研究不足
The coupling efficiency between the MQW-diode and waveguide is negatively affected by the etching away of p-type GaN and MQW layers on the waveguide. The small index contrast between III-nitride and sapphire leads to optical leakage and crosstalk. The device size affects the emission intensity and response rate.
1：Experimental Design and Method Selection:
The study involves the fabrication of a monolithic III-nitride electronic–photonic system on a III-nitride-on-sapphire platform, utilizing the simultaneous emission-detection phenomenon (SEDP) for optical communication between two MQW-diodes.
2：Sample Selection and Data Sources:
The samples are fabricated on sapphire substrates with AlN buffer layers, undoped AlGaN layers, n-type AlGaN layers, MQW structures, p-type electron blocking layers, and p-type GaN layers.
3：List of Experimental Equipment and Materials:
Equipment includes photolithography for isolation mesas definition, inductively coupled plasma reactive ion etching for exposing n-type AlGaN, electron beam evaporation for metal contacts, and optical characterization tools like SEM, AFM, and spectrometers.
4：Experimental Procedures and Operational Workflow:
The process involves defining isolation mesas, etching to expose n-type AlGaN, depositing metal contacts for p- and n-contacts, defining and etching waveguides, and characterizing the optical and electrical properties of the system.
5：Data Analysis Methods:
The analysis includes measuring current–voltage (I–V) curves, electroluminescence (EL) spectra, and photocurrent responses to evaluate the system's performance.
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