研究目的
Investigating the growth characteristics, morphological changes, and crystallinity evolution of ZnO thin films grown by atomic layer deposition using diethylzinc and water as precursors.
研究成果
The study successfully characterized the growth characteristics and crystallinity of ALD ZnO films using DEZ and water as precursors. It was found that the growth rate and crystallinity are highly temperature-dependent, with optimal growth conditions identified. The proposed adsorption-limited surface reaction model provides new insights into the ALD process of ZnO.
研究不足
The study is limited to the use of DEZ and water as precursors for ALD ZnO growth, and the temperature range of 30–250 °C. The findings may not be directly applicable to other precursor systems or deposition conditions.
1：Experimental Design and Method Selection:
The study employed atomic layer deposition (ALD) for growing ZnO thin films using diethylzinc (DEZ) and water as precursors. The growth characteristics were monitored using in situ quartz crystal microbalance (QCM), and the crystallinity was analyzed using synchrotron-based X-ray diffraction and high-resolution transmission electron microscopy.
2：Sample Selection and Data Sources:
ZnO thin films were deposited on various substrates including Si wafers, nitrogen-doped graphene (NGS), and nitrogen-doped carbon nanotubes (N-CNTs) at temperatures ranging from 30 to 250 °C.
3：List of Experimental Equipment and Materials:
A commercial ALD reactor (Savannah 200, Cambridge Nanotech Inc., USA) was used for deposition. Characterization tools included SEM, AFM, HRTEM, synchrotron-based XRD, and XRR.
4：Experimental Procedures and Operational Workflow:
The ALD process involved alternating doses of DEZ and water, with Ar gas as the carrier and purge gas. The growth was monitored in situ by QCM, and the films were characterized ex situ using the aforementioned techniques.
5：Data Analysis Methods:
The growth rate and crystallinity were analyzed based on QCM data, XRD patterns, and TEM images to understand the temperature-dependent growth characteristics and crystallinity of ZnO films.
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